1999. 11. 30 1/3 semiconductor technical data KTA1070 epitaxial planar pnp transistor revision no : 1 high-definition crt display video output application. features high voltage : v ceo =-200v. high transition frequency : f t =150mhz(typ.). low collector output capacitance : c ob =2.6pf(typ.). complementary to ktc3467. maximum rating (ta=25 1 ) dim millimeters a b d e g h k l 1. emitter 2. collector 3. base p to-92l 7.20 max 5.20 max 2.50 max 0.60 max 1.27 1.70 max 0.55 max 14.00 0.50 0.35 min 0.75 0.10 4 f j m o q 25 1.25 1.50 0.10 max depth:0.2 123 b a c q k ff m m n n o h l j d c n g p hh e d h r s 12.50 0.50 r 1.00 s 1.15 max + _ + _ + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo -200 v collector-emitter voltage v ceo -200 v emitter-base voltage v ebo -5 v collector current dc i c -100 ma pulse i cp -200 collector power dissipation p c 1 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-150v, i e =0 - - -0.1 a emitter cut-off current i ebo v eb =-4v, i c =0 - - -0.1 a collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -200 - - v dc current gain h fe v ce =-5v, i c =-10ma 70 - 240 - collector-emitter saturation voltage v ce(sat) i c =-20ma, i b =-2ma - - -0.6 v base-emitter saturation voltage v be(sat) i c =-20ma, i b =-2ma - - -1.0 v transition frequency f t v ce =-30v, i c =-10ma - 150 - mhz collector output capacitance c ob v cb =-30v, i e =0, f=1mhz - 2.6 - pf reverse transfer capacitance c re v cb =-30v, i e =0, f=1mhz - 1.7 - pf note : h fe classification 0:70 140 , y:120 240
1999. 11. 30 2/3 KTA1070 revision no : 1 collector current i (ma) 0 c 0 collector-emitter voltage v (v) ce ce c i - v collector-emitter saturation -0.05 ce(sat) -10 -3 -1 -0.5 collector current i (ma) c v - i h - i c collector current i (ma) -0.5 -1 -3 -10 fe dc current gain h 10 base-emitter voltage v (v) c collector current i (ma) 0 0 be i - v cbe base-emitter saturation collector current i (ma) -0.5 -1 -3 -10 c be(sat) v - i -2 -4 -6 -8 -10 -4 -8 -12 -16 -20 common emitter ta=25 c i =-20 a b i =-40 a b i =-60 a b i =-80 a b i =-100 a b i =-120 a b -0.2 -0.4 -0.6 -0.8 -1.0 -20 -40 -60 -80 -100 -120 ta=75 c t a= 2 5 c ta =-2 5 c common emitter v =-10v ce fe c -30 -200 30 50 100 300 500 1k common emitter v =-5v ce ce(sat) c voltage v (v) -30 -100 -0.1 -0.3 -0.5 -1 -3 -5 common emitter i /i =10 ta=25 c c b transition frequency f (mhz) collector current i (ma) 10 30 100 50 c t 300 1k 500 f - i tc be(sat) c voltage v (v) -30 -100 -200 -0.3 -0.5 -1 -3 -5 -10 common emitter i /i =10 ta=25 c c b -100 ta=75 c ta=25 c ta=-25 c -30 -1 -0.5 -10 -3 -200 -100 ce v =-30v ta=25 c common emitter
1999. 11. 30 3/3 KTA1070 revision no : 1 c p (w) 0 collector power dissipation reverse transfer capacitance re collector-base voltage v (v) cb 0 ambient temperature ta ( c) pc - ta c - v c - v cb collector-base voltage v (v) -0.7 -1 -3 -10 ob 0.3 output capacitanced c (pf) collector-emitter voltage v (v) collector current i (ma) -2 c -5 -10 ce -30 -100 safe operating area ob cb -30 -100 0.5 1 3 5 10 i =0 f=1mhz ta=25 c e re cb c (pf) e ta=25 c f=1mhz i =0 10 5 3 1 0.5 0.3 -100 -30 -10 -3 -1 -0.7 20 40 60 80 100 120 140 160 0.2 0.4 0.6 0.8 1.0 1.2 -50 -300 -5 -10 -30 -50 -100 -300 single nonrepetitive pulse ta=25 c curves must be derated linearly with increase in temperature * i max(pulsed) c * c i max(continuous) 500 s 1m s 10 ms dc o p eratio n * * *
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